Weebit Nano and DB HiTek Tape-Out ReRAM Module in DB HiTek’s 130 nm BCD Course of – Uplaza

Weebit Nano Restricted (Weebit), a number one developer and licensor of superior reminiscence applied sciences for the worldwide semiconductor business, and tier-1 semiconductor foundry DB HiTek have taped-out (launched to manufacturing) an indication chip integrating Weebit’s embedded Resistive Random-Entry Reminiscence (ReRAM) module in DB HiTek’s 130 nm Bipolar-CMOS-DMOS (BCD) course of. The extremely built-in demo chips will likely be used for testing and qualification forward of buyer manufacturing, whereas demonstrating the efficiency and robustness of Weebit’s expertise.

This necessary milestone within the collaboration between Weebit and DB HiTek (beforehand introduced on 19 October 20231) was accomplished on-schedule as a part of the expertise switch course of. The businesses are working to make Weebit ReRAM accessible to DB HiTek prospects for integration of their programs on chips (SoCs) as embedded non-volatile reminiscence (NVM), and goal to have the expertise certified and prepared for manufacturing within the second quarter of the 2025 calendar 12 months. Weebit ReRAM is out there now to pick out DB HiTek prospects for design prototyping forward of manufacturing.

DB HiTek’s 130 nm BCD course of is right for analog, mixed-signal and high-voltage designs in purposes corresponding to client, industrial, and IoT gadgets. For these purposes, Weebit ReRAM offers a cost- efficient, low-power NVM that’s straightforward to combine and has confirmed wonderful retention at excessive temperatures. ReRAM presents important benefits over flash for BCD processes as a result of it’s a back-end- of-line (BEOL) expertise which doesn’t require important course of tuning. Weebit ReRAM additionally offers greater density and endurance in comparison with standard Multi-Time Programmable (MTP) applied sciences.

Coby Hanoch, CEO of Weebit Nano, stated: “This milestone confirms we are proceeding towards qualification of our ReRAM in DB HiTek’s BCD process on schedule, making the technology available to this leading foundry’s extensive customer base. We’re already in early adopter discussions with several DB HiTek customers who are interested in integrating ReRAM in their SoCs. One area of interest is smart
power management integrated circuits (PMICs), where integrating the PMIC with the microcontroller (MCU) on one die can lead to performance, security, power and cost advantages.”

Ki-Seog Cho, CEO, DB HiTek, stated: “Many of our customers, especially those with power management and high-voltage designs, are looking to gain the advantages of embedded ReRAM. Weebit ReRAM will
provide customers using our 130 nm BCD process with a low-power, cost-effective and high-density NVM. And by moving from a two-chip to a single-die solution, they can save cost and power, and reduce
complexity and size. We have a great working relationship with Weebit, and we’re excited to continue this very promising collaboration.”

As soon as certified, DB HiTek will add Weebit’s reminiscence module to its BCD 130 nm Course of Design Package (PDK). DB HiTek prospects can use the usual modules within the PDK or have modules custom-made for his or her wants.

The demonstration chip features a 1 Mb ReRAM module that may be scaled to different densities as wanted. This fully-integrated module additionally consists of all vital management logic, sensible algorithms, decoders, IOs (Enter/Output communication parts) and error correcting code (ECC). It’s designed with distinctive patent-pending analog and digital circuitry working sensible algorithms that considerably improve the reminiscence array’s technical parameters. This ReRAM module is additional built-in into the demo chip, comprising a full sub-system for embedded purposes, together with the Weebit ReRAM module, a RISC-V MCU, SRAM, peripherals and system interfaces together with SPI, UART, JTAG and GPIO.

This announcement has been authorised for launch by the Board of Weebit Nano Restricted.

Share This Article
Leave a comment

Leave a Reply

Your email address will not be published. Required fields are marked *

Exit mobile version